A breakthrough in next-generation semiconductor technology has been announced by Chinese researchers, with the creation of the world’s largest N-polar gallium nitride (GaN) wafer, at eight ...

IN a series of experiments now in progress, we are directing a narrow beam of electrons normally against a target cut from a single crystal of nickel, and are measuring the intensity of scattering ...

High-grade gallium intercepts observed at Fluorite Zone and Target 6, up to 232 g/t Ga. Best intercept: MM039 from surface to 100m at 77 g/t Ga, including 14.89m at 141 g/t Ga. Gallium is a rare and ...

Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, College of Engineering, Seoul National University, Seoul 08826, Republic of Korea ...

Change orientation to land scape to view the price table ...